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1

The effect of polysilicon doping on the reverse short-channel effect in sub-quarter micron NMOS transistors

Sadovnikov, A., Kalnitsky, A., Bergemont, A., Hopper, P.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 107 KB

english, 2001

2

(Invited) Status and Future of IC Analog Technologies

Journal:

ECS Transactions

Year:

2013

Language:

english

File:

PDF, 3.73 MB

english, 2013

3

Precision electrical trimming of very low TCR poly-SiGe resistors

Babcock, J.A., Francis, P., Bashir, R., Kabir, A.E., Schroder, D.K., Lee, M.S.L., Dhayagude, T., Yindeepol, W., Prasad, S.J., Kalnitsky, A., Thomas, M.E., Haggag, H., Egan, K., Bergemont, A., Jansen,

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 56 KB

english, 2000

4

[IEEE 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings - Toulouse, France (22-25 May 2000)] 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) - High voltage driver built in a low voltage 0.18 μm CMOS for cache redundancy applications in microprocessors

Bergemont, A., Saadat, I., Francis, P., Pichler, C., Haggag, H., Kalnitsky, A.

Year:

2000

Language:

english

File:

PDF, 360 KB

english, 2000

5

[IEEE ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings - Penang, Malaysia (26-28 Nov. 1996)] ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings - Low-voltage multi-level flash memory: determination of minimum spacing between multi-levels [CMOS]

Min-Hwa Chi,, Bergemont, A.

Year:

1996

Language:

english

File:

PDF, 462 KB

english, 1996

6

A novel isolation scheme for implementation in very high density AMG EPROM and FLASH EEPROM arrays

Graham R. Wolstenholme, Albert Bergemont

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 229 KB

english, 1992

7

[IEEE IEEE International Electron Devices Meeting - Washington, DC, USA (5-8 Dec. 1993)] Proceedings of IEEE International Electron Devices Meeting - NOR virtual ground (NVG)-a new scaling concept for very high density flash EEPROM and its implementation in a 0.5 um process

Bergemont, A., Haggag, H., Anderson, L., Shacham, E., Wolstenholme, G.

Year:

1993

Language:

english

File:

PDF, 355 KB

english, 1993

8

[IEEE 1994 IEEE International Conference on Microelectronic Test Structures - San Diego, CA, USA (22-25 March 1994)] Proceedings of 1994 IEEE International Conference on Microelectronic Test Structures - Novel test structures for process development and monitoring of stack etches for high density FLASH and EPROM memories

Shacham, E., Wolstenholme, G., Perry, J., Narahai, N., Bergemont, A.

Year:

1994

Language:

english

File:

PDF, 362 KB

english, 1994

9

[IEEE Technical Papers. International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan (June 3-5, 1997)] Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications - A High Resolution Cmos Imager With Active Pixel Using Capacitively Coupled Bipolar Operation

Min-hwa Chi,, Delbruck, T., Mascarenhas, N., Bergemont, A., Mead, C.

Year:

1997

Language:

english

File:

PDF, 385 KB

english, 1997

10

[IEEE 1993 International Symposium on VLSI Technology, Systems, and Applications Technical Papers - Taipei, Taiwan (12-14 May 1993)] 1993 International Symposium on VLSI Technology, Systems, and Applications Proceedings of Technical Papers - A 65ns 1Mb CMOS alternate metal virtual ground EPROM with dual reference sensing scheme and word line voltage regulator

Hoang, L., Nielsen, P., Bergemont, A., Kablanian, A., Irani, R., Kazerounian, R., Eitan, B., Salter, R., Breinholt, W., Wolstenholme, G., Anderson, L., Shacham, E., Haggag, H., Wenzbauer, D., Diroll,

Year:

1993

Language:

english

File:

PDF, 239 KB

english, 1993

11

[IEEE 1995 IEEE International SOI Conference - Tucson, AZ, USA (3-5 Oct. 1995)] 1995 IEEE International SOI Conference Proceedings - Programming and erase with floating-body for high density low voltage flash EEPROM fabricated on SOI wafers

Min-Hwa Chi,, Bergemont, A.

Year:

1995

Language:

english

File:

PDF, 163 KB

english, 1995

12

[IEEE 1993 International Symposium on VLSI Technology, Systems, and Applications Technical Papers - Taipei, Taiwan (12-14 May 1993)] 1993 International Symposium on VLSI Technology, Systems, and Applications Proceedings of Technical Papers - A new cell and process for very high density full feature EEPROMs and low power applications

Bergemont, A., Haggag, H., Hart, M., Anderson, L.

Year:

1993

Language:

english

File:

PDF, 235 KB

english, 1993

13

A Robust LPCVD Nitride Integrated Process for High Density Non-Volatile Eprom Memories

Sethi, R. B., Ciari, R. P., Anderson, L., Kim, U. S., Bergemont, A.

Journal:

MRS Proceedings

Year:

1993

Language:

english

File:

PDF, 586 KB

english, 1993

14

[IEEE 11th European Solid State Circuits Conference - Toulouse, France (1985.9.16-1985.9.18)] ESSCIRC '85: 11th European Solid-State Circuits Conference - A 256K CMOS EPROM

Calzi, Ph., Devin, J., Bergemont, A.

Year:

1985

Language:

english

File:

PDF, 1.04 MB

english, 1985

15

Non-volatile memory device with true CMOS compatibility

Chang, L., Kuo, C., Hu, Chenming, Kalnitsky, A., Bergemont, A., Francis, P.

Journal:

Electronics Letters

Year:

1999

Language:

english

File:

PDF, 135 KB

english, 1999

16

[IEEE Nonvolatile Memory Technology Conference - Albuquerque, NM, USA (24-26 June 1996)] Proceedings of Nonvolatile Memory Technology Conference - True low-voltage flash memory operations

Min-Hwa Chi,, Bergemont, A.

Year:

1996

Language:

english

File:

PDF, 560 KB

english, 1996

17

[IEEE International Technical Digest on Electron Devices Meeting - Washington, DC, USA (3-6 Dec. 1989)] International Technical Digest on Electron Devices Meeting - A high performance CMOS process for submicron 16 Mb EPROM

Bergemont, A., Deleonibus, S., Guegan, G., Guillaumot, B., Laurens, M., Martin, F.

Year:

1989

Language:

english

File:

PDF, 331 KB

english, 1989

18

[IEEE 1995 International Symposium on VLSI Technology, Systems, and Applications. - Taipei, Taiwan (31 May-2 June 1995)] 1995 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers - A new erase VT distribution model for reliability design in high density flash EEPROM

Min-Hwa Chi,, Haggag, H., Bergemont, A.

Year:

1995

Language:

english

File:

PDF, 436 KB

english, 1995

19

Alternate metal virtual ground (AMG)-a new scaling concept for very high-density EPROMs

Eitan, B., Kazerounian, R., Bergemont, A.

Journal:

IEEE Electron Device Letters

Year:

1991

Language:

english

File:

PDF, 277 KB

english, 1991

20

[IEEE 1997 55th Annual Device Research Conference Digest - Fort Collins, CO, USA (23-25 June 1997)] 1997 55th Annual Device Research Conference Digest - A new single-poly flash memory cell with low-voltage and low-power operations for embedded applications

Min-Hwa Chi,, Bergemont, A.

Year:

1997

Language:

english

File:

PDF, 200 KB

english, 1997

21

[IEEE Southcon/96 Conference Record - Orlando, FL, USA (25-27 June 1996)] Southcon/96 Conference Record - A CMOS process for mixed mode signal design

Hung-Sheng Chen,, Chih Sieh Teng,, Ji Zhao,, Moberly, L., Chin-Miin Shyu,, Bergemont, A.

Year:

1996

Language:

english

File:

PDF, 466 KB

english, 1996

22

[IEEE International Electron Devices Meeting - Washington, DC, USA (10-13 Dec. 1995)] Proceedings of International Electron Devices Meeting - Multi-level flash/EPROM memories: new self-convergent programming methods for low-voltage applications

Min-Hwa Chi,, Bergemont, A.

Year:

1995

Language:

english

File:

PDF, 350 KB

english, 1995

23

Low voltage NVGTM: a new high performance 3 V/5 V flash technology for portable computing and telecommunications applications

Bergemont, A., Min-Hwa Chi, Haggag, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 736 KB

english, 1996

24

[IEEE International Electron Devices Meeting 1999. Technical Digest - Washington, DC, USA (5-8 Dec. 1999)] International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) - CoSi/sub 2/ integrated fuses on poly silicon for low voltage 0.18 μm CMOS applications

Kalnitsky, A., Saadat, I., Bergemont, A., Francis, P.

Year:

1999

Language:

english

File:

PDF, 496 KB

english, 1999

25

[IEEE International Electron Devices Meeting 1991 [Technical Digest] - Washington, DC, USA (8-11 Dec. 1991)] International Electron Devices Meeting 1991 [Technical Digest] - Alternate metal virtual ground EPROM array implemented in a 0.8 mu m process for very high density applications

Kazerounian, R., Bergemont, A., Roy, A., Wolstenholme, G., Irani, R., Shamay, M., Gaffur, H., Rezvani, G.A., Anderson, L., Haggag, H., Shacham, E., Kauk, P., Nielson, P., Kablanian, A., Chhor, K., Per

Year:

1991

Language:

english

File:

PDF, 326 KB

english, 1991

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